Load-lock type plasma ALD system "AD-230LP"
Alternately supply organometallic materials and oxidants to the reaction chamber, and film formation occurs only through surface reactions.
The "AD-230LP" is an ALD device capable of atomic-level film thickness control. It supplies organic metal precursors and oxidizers alternately to the reaction chamber, forming a film solely through surface reactions. With a load-lock chamber, it does not expose the reaction chamber to the atmosphere, allowing for highly reproducible film formation. Additionally, by adopting a capacitively coupled plasma (CCP) method, it minimizes the volume of the reaction chamber, shortens gas purge times, and accelerates each cycle. 【Features】 - Conformal film formation at the top, middle, and bottom - Uniform layer control at the atomic monolayer level - Conformal film formation possible for high aspect ratio structures - Excellent in-plane uniformity and reproducibility, achieving a stable process - Unique reaction chamber structure suppresses particles *For more details, please refer to the PDF document or feel free to contact us.
- Company：サムコ
- Price：Other
